Title :
Light Emission by Dislocations in Silicon
Author :
Reiche, M. ; Kittler, M. ; Wilhelm, T. ; Arguirov, T. ; Seifert, W. ; Yu, X.
Author_Institution :
Max-Planck-Inst. fur Mikrostrukturphys., Weinberg
Abstract :
Different approaches for Si-based light emitters were studied. The D band emission of dislocations formed by wafer bonding is a promising candidate for spatially confirmed emitters at 1.3mum leslambdales1.5mum
Keywords :
dislocations; electroluminescence; elemental semiconductors; light emitting diodes; photoluminescence; silicon; wafer bonding; D band emission; Si-based light emitter; dislocation; light emission; silicon; spatially confirmed emitters; wafer bonding; Boron; Electroluminescence; Light emitting diodes; Luminescence; Microelectronics; Optical materials; Semiconductor materials; Silicon; Temperature; Wafer bonding;
Conference_Titel :
Optical MEMS and Their Applications Conference, 2006. IEEE/LEOS International Conference on
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-9562-X
DOI :
10.1109/OMEMS.2006.1708289
