A novel IGCT-based Half-controlled Bridge Type Fault Current Limiter

Author

Fei, Wanmin ; Zhang, Yanli

Author_Institution

Sch. of Electr. & Autom. Eng., Nanjing Normal Univ.

Volume

2

fYear

2006

fDate

14-16 Aug. 2006

Firstpage

1

Lastpage

5

Abstract

A novel IGCT-based half-controlled bridge-type fault current limiter is proposed in this paper. By substituting the half-controllable SCR in the rectifier bridge with self-turn-off device IGCT, the uncontrolled lime of the converter bridge can be reduced from half a cycle to the delay time of the current measuring circuit. If the maximum current in the dc reactor is preset, the inductance, volume, weight and cost of the DC reactor can be reduced to one 32th of what it is in the SCR-based bridge type FCL in three phase power systems approximately. The magnetization time of the DC reactor is reduced. The control method is very simple. The dynamic performance of the proposal FCL can be improved. Topology and control strategies of the proposal FCL are described in detail. Simulations under each short circuit fault mode are carried out. An experimental model is constituted and tested. Simulation and experiment results proved the practicability and validity of the new FCL

Keywords

bridge circuits; fault current limiters; rectifying circuits; short-circuit currents; thyristor applications; IGCT-based half-controlled bridge type fault current limiter; SCR-based rectifier bridge type FCL; converter bridge; current measuring circuit; dc reactor; integrated gate commutated thyristor; magnetization time; short circuit fault mode; three phase power system; Bridge circuits; Circuit simulation; Delay effects; Fault current limiters; Inductors; Power system dynamics; Power system simulation; Proposals; Rectifiers; Thyristors; Control strategy; Self-turnoff device; Short circuit fault current Limiter; half-controlled rectifier bridge;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International

Conference_Location

Shanghai

Print_ISBN

1-4244-0448-7

Type

conf

DOI

10.1109/IPEMC.2006.4778168

Filename

4778168