Title :
Feasibility Study of AlGaN/GaN HEMT for Multi-megahertz DC/DC Converter Applications
Author :
Gao, Yang ; Huang, Alex Q.
Author_Institution :
Semicond. Power Electron. Center, North Carolina State Univ., Raleigh, NC
Abstract :
The DC and AC characteristics of a 30 V AlGaN/GaN HEMT was investigated by numerical simulations. By properly model the 2DEG in the AlGaN/GaN interface, we obtain a maximum transconductance of 221 mS/mm, a saturation current density of 1.28 A/mm, a specific Rdson of 2.5 mOmega-mm2, a specific Qgd of 0.62 nC/mm2 and the value of FOM of 1.6 mOmeganC. The comparison with of the state-of-the-art Si-LDMOS and Si-Trench MOSFET were carried out and the results indicate that HEMTs could be a good candidate for very high frequency DC/DC converter applications
Keywords :
DC-DC power convertors; III-V semiconductors; aluminium compounds; gallium compounds; numerical analysis; power HEMT; power MOSFET; silicon; 30 V; AC characteristics; AlGaN-GaN; AlGaN-GaN HEMT; DC characteristics; Si-trench MOSFET; maximum transconductance; multimegahertz DC-DC converters; numerical simulation; saturation current density; state-of-the-art Si-LDMOS; Aluminum gallium nitride; Current density; DC-DC power converters; Electron mobility; Frequency conversion; Gallium nitride; HEMTs; MOSFET circuits; Switches; Transconductance; AlGaN/GaN; HEMT; power; switch;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4778172
