DocumentCode :
2664436
Title :
16-channel readout ASIC for a hodoscope
Author :
Deng, Shi-ming ; Mathez, Hervé ; Dauvergne, Denis ; Lu, Guo-Neng
Author_Institution :
Inst. de Phys. Nucl. de Lyon (IPNL), Univ. de Lyon, Villeurbanne, France
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
33
Lastpage :
36
Abstract :
This paper presents a front-end 16-channel readout chip to be coupled with PMs (photomultipliers) or APDs (avalanche photodiodes), which is designed in a BiCMOS process for a fast beam tagging system used in ion-therapy. Each channel consists of a current conveyor and two separate output stages: one is a current comparator for signal event detection, and the other is a charge sensitive amplifier (CSA) for signal charge measurement. The current conveyor employs super-common-base (SCB) transistor structure, which allows the input impedance to be as low as a few ohms. The current-mode architecture with current comparator also makes it possible to improve performances especially in speed and dynamic range.
Keywords :
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; amplifiers; application specific integrated circuits; avalanche photodiodes; charge measurement; current comparators; current conveyors; particle detectors; photomultipliers; radiation therapy; readout electronics; BiCMOS process; CSA; SCB transistor; avalanche photodiode; beam tagging system; charge sensitive amplifier; current comparator; current conveyor; front-end 16-channel readout ASIC; hodoscope; ion-therapy; photomultiplier; signal charge measurement; signal event detection; super-common-base transistor; Bandwidth; BiCMOS integrated circuits; CMOS integrated circuits; Current measurement; Gain measurement; Semiconductor device measurement; Semiconductor device modeling; Current conveyor; current comparator; current-mode architecture; super-common-base (SCB) transistor structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
Type :
conf
DOI :
10.1109/ICECS.2010.5724447
Filename :
5724447
Link To Document :
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