• DocumentCode
    2664538
  • Title

    Integrated IC-like Thyristor-based Switching Structure for Pulse Current Generation to Electronic Ignition

  • Author

    Zhang, C.L. ; Jeon, K.S. ; Ahn, C.H. ; Park, J.D. ; Kim, E.D. ; Zhi, Na ; Gao, Yong

  • Author_Institution
    Semiwell Semicond. Ltd., Bucheon
  • Volume
    2
  • fYear
    2006
  • fDate
    14-16 Aug. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel IC-like integration device structure and manufacture process for a thyristor-based capacitor discharging circuit applicable to pulse current generation are studied in this paper. Two structures are compared by means of different design of diode which used as for trigger main thyristor. Substitution of a Zener diode with a p+ n avalanche diode in the equivalent circuit can give more stability of pulse-voltage temperature property. Simulation results by Silvaco commercial simulation software indicate that a shallow junction of the avalanche diode has a much improvement in the manufacture process as well as the stable operation at elevated temperature
  • Keywords
    avalanche diodes; electric ignition; equivalent circuits; power capacitors; power integrated circuits; power semiconductor diodes; power semiconductor switches; thyristor applications; IC-like integration device structure; Silvaco commercial simulation software; Zener diode; diode design; electronic ignition; equivalent circuit; manufacture process; p+n avalanche diode; pulse current generation; pulse-voltage temperature properties; stability; switching structure; thyristor-based capacitor discharging circuit; Circuit simulation; Diodes; Ignition; Integrated circuit manufacture; Manufacturing processes; Pulp manufacturing; Pulse circuits; Pulse generation; Switched capacitor circuits; Temperature; IC; electronic ignition; pulse; thyristor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0448-7
  • Type

    conf

  • DOI
    10.1109/IPEMC.2006.4778180
  • Filename
    4778180