From nanoscale technology scenarios to compact device models for ambipolar devices

Author

Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas

Author_Institution

Lab. IMS, Univ. Bordeaux, Bordeaux, France

fYear

2010

fDate

12-15 Dec. 2010

Firstpage

57

Lastpage

61

Abstract

A compact model for Dual gate carbon nanotube FET (DGCNTFET) is presented. This compact model includes the most significant mechanisms present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation and an improved equivalent circuit. Then, this compact model is compared and validated using measurement data. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.

Keywords

carbon nanotubes; field effect transistors; oscillators; C; Landauer equation; Schottky barrier; ambipolar device; compact device model; dual gate carbon nanotube FET; electrostatic modelling; equivalent circuit; metallic-nanotube interface; nanoscale technology; quasiballistic transport; ring oscillator circuit; CNTFETs; DH-HEMTs; Integrated circuit modeling; CNTFET; SPICE; carbon nanotube; compact modelling; dual gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on

Conference_Location

Athens

Print_ISBN

978-1-4244-8155-2

Type

conf

DOI

10.1109/ICECS.2010.5724453

Filename

5724453