DocumentCode :
2664543
Title :
From nanoscale technology scenarios to compact device models for ambipolar devices
Author :
Fregonese, Sebastien ; Maneux, Cristell ; Zimmer, Thomas
Author_Institution :
Lab. IMS, Univ. Bordeaux, Bordeaux, France
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
57
Lastpage :
61
Abstract :
A compact model for Dual gate carbon nanotube FET (DGCNTFET) is presented. This compact model includes the most significant mechanisms present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation and an improved equivalent circuit. Then, this compact model is compared and validated using measurement data. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.
Keywords :
carbon nanotubes; field effect transistors; oscillators; C; Landauer equation; Schottky barrier; ambipolar device; compact device model; dual gate carbon nanotube FET; electrostatic modelling; equivalent circuit; metallic-nanotube interface; nanoscale technology; quasiballistic transport; ring oscillator circuit; CNTFETs; DH-HEMTs; Integrated circuit modeling; CNTFET; SPICE; carbon nanotube; compact modelling; dual gate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
Type :
conf
DOI :
10.1109/ICECS.2010.5724453
Filename :
5724453
Link To Document :
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