From nanoscale technology scenarios to compact device models for ambipolar devices

A compact model for Dual gate carbon nanotube FET (DGCNTFET) is presented. This compact model includes the most significant mechanisms present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation and an improved equivalent circuit. Then, this compact model is compared and validated using measurement data. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.