Title :
The potential of p-well GaAs MESFET technology for precision integrated circuits
Author :
Canfield, Philip C. ; Allstot, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
A p-well GaAs MESFET technology that totally eliminates sidegating between adjacent MESFETs is described. Both the small-signal output conductance (gds) frequency dispersion, and the drain current transients of the p-well GaAs MESFET are reduced by more than an order of magnitude as compared with a conventional GaAs MESFET. The test chip used to develop the p-well MESFET technology is discussed. It includes an array of sidegate structures to test the importance of the various p-type layers and the importance of connecting the p-well to the source. Several analog building blocks and circuits are implemented, including fully-differential self-bootstrapped gain stages, transimpedance amplifiers with metal-semiconductor-metal photodetectors, precision DC voltage references, and other operational amplifiers
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; linear integrated circuits; operational amplifiers; GaAs; III-V semiconductors; analogue circuits; drain current transients; frequency dispersion; metal-semiconductor-metal photodetectors; operational amplifiers; p-type layers; p-well MESFET technology; precision DC voltage references; self-bootstrapped gain stages; sidegate structures; small-signal output conductance; test chip; transimpedance amplifiers; Analog integrated circuits; Electron mobility; Electron traps; Frequency; Gallium arsenide; Integrated circuit technology; MESFET integrated circuits; Steady-state; Substrates; Voltage;
Conference_Titel :
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location :
New Orleans, LA
DOI :
10.1109/ISCAS.1990.112659
