Integrated GaAs microsensors

Author

Polla, D.L. ; Tamagawa, T. ; Choi, J.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

fYear

1990

fDate

1-3 May 1990

Firstpage

3085

Abstract

The compatible integration of planar-processed microsensor structures with GaAs MESFET depletion-mode, operational amplifiers is described. Circuits using 2.0 μm-gate FETs are formed in a planar, direct, ion-implantation process. The main features of this process include a lightly-doped shallow channel layer, selective n⁺ contact layers, and planar isolation by proton implantation. A deformable microsensor structure using the piezoelectric thin-film zinc oxide is formed over a micromachined air gap over the GaAs substrate. The circuit and fabrication issues of integrated GaAs microsensors are described and compared with equivalent implementations using silicon technology

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric sensing devices; field effect integrated circuits; gallium arsenide; ion implantation; operational amplifiers; 2 micron; GaAs substrate; GaAs-ZnO; MESFET; ZnO thin film; compatible integration; deformable microsensor structure; depletion-mode; fabrication; ion-implantation process; lightly-doped shallow channel layer; micromachined air gap; monolithic type; operational amplifiers; piezoelectric thin-film; planar isolation; planar-processed microsensor structures; proton implantation; selective n⁺ contact layers; Circuits; FETs; Gallium arsenide; MESFETs; Microsensors; Operational amplifiers; Piezoelectric films; Protons; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112664

Filename

112664