DocumentCode
2664846
Title
Integrated GaAs readout multiplexer and preprocessing electronics for infrared sensors
Author
Vu, T.T. ; Nguyen, P.C. ; Vu, J.N. ; Nguyen, C.H. ; Vu, L.T.
Author_Institution
Top-Vu Technol. Inc., New Brighton, MN, USA
fYear
1990
fDate
1-3 May 1990
Firstpage
3093
Abstract
The use of gallium arsenide (GaAs) technology for infrared focal plane array (IR-FPA) sensors is proposed. The GaAs characteristics, circuits, and architectures for readout multiplexer and preprocessing electronics are described for both one-dimensional and two-dimensional FPAs. Noise, low temperature, radiation hardness, and thermal matching characteristics are described
Keywords
III-V semiconductors; electron device noise; gallium arsenide; image sensors; infrared detectors; infrared imaging; monolithic integrated circuits; multiplexing equipment; radiation hardening (electronics); signal processing equipment; 1D FPA; 2D FPA; GaAs; IR-FPA; infrared focal plane array; infrared sensors; low temperature; noise characteristics; preprocessing electronics; radiation hardness; readout multiplexer; thermal matching characteristics; Gallium arsenide; High speed optical techniques; Infrared sensors; Multiplexing; Optical feedback; Optical sensors; Optical signal processing; Sensor arrays; Signal detection; Transversal filters;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., IEEE International Symposium on
Conference_Location
New Orleans, LA
Type
conf
DOI
10.1109/ISCAS.1990.112666
Filename
112666
Link To Document