Title :
A comparison of charge transport in electron-beam and graphite-strip ZMR
Author :
Stein, H.J. ; Thompson, L.R. ; Tsao, S.S.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Summary form only given. Transport characteristics for SOI produced by zone melt recrystallization (ZMR) methods have been measured and compared to those for separation by implantation of oxygen (SIMOX) and bulk Si. Many of the characteristics are similar to those reported for SIMOX material. Evidence of a deep acceptor level was found in graphite-stripe ZMR, and the low-temperature transport characteristics of e-beam ZMR were found to be degraded by mosaic spread. Thermal donor formation in ZMR SOI has also been examined and is discussed
Keywords :
electronic conduction in crystalline semiconductor thin films; elemental semiconductors; recrystallisation; semiconductor technology; semiconductor-insulator boundaries; silicon; SIMOX; ZMR SOI; bulk Si; charge transport; deep acceptor level; e-beam ZMR; electron beam ZMR; graphite-strip ZMR; low-temperature transport characteristics; mosaic spread; semiconductors; separation by implantation of oxygen; thermal donor formation; zone melt recrystallization; Conductivity; Electric resistance; Electric variables measurement; Electron mobility; Grain boundaries; Hall effect; Laboratories; Sulfur hexafluoride; Temperature dependence; X-ray scattering;
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
DOI :
10.1109/SOI.1989.69796
