DocumentCode :
2665062
Title :
A 109dB PSRR, 31µW fully-MOSFET bandgap voltage reference in 0.13µm CMOS technology
Author :
Souri, Kianoush ; Shamsi, Hossein ; Samadian, Sarvenaz ; Mirzaie, Hossein
Author_Institution :
K.N. Toosi Univ. of Technol., Tehran, Iran
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
182
Lastpage :
185
Abstract :
A new technique to improve the power supply rejection ratio (PSRR) in bandgap voltage references is described in this paper. The conventionally used NPN transistors are replaced by MOS transistors which are biased in the weak inversion region. The proposed virtually diode-connected biasing scheme for MOS transistors significantly increases the loop gain, thus reducing the system sensitivity and consequently increasing the PSRR. The circuit is designed in a standard 0.13 μm CMOS technology and the simulation results show a PSRR of 109 dB at DC. The variation of the reference voltage VREF over temperature range from -55°C to 125°C is only 12 mV which is translated to a temperature coefficient of 65 ppm/°C. It dissipates 31 μw from a 0.9 V-1.2 V supply voltage.
Keywords :
CMOS integrated circuits; MOSFET; bipolar transistors; semiconductor diodes; CMOS Technology; MOS transistor; NPN transistor; fully-MOSFET bandgap voltage reference; gain 109 dB; loop gain; power 31 muW; power supply rejection ratio; size 0.13 mum; temperature -55 degC to 125 degC; virtually diode-connected biasing scheme; voltage 0.9 V to 1.2 V; voltage 12 mV; weak inversion region;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
Type :
conf
DOI :
10.1109/ICECS.2010.5724484
Filename :
5724484
Link To Document :
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