Higher order diffusion model for a bipolar transistor

Author

Lehtinen, Kari ; Sipila, Markku ; Porra, Veikko

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

fYear

1990

fDate

1-3 May 1990

Firstpage

3230

Abstract

A higher order diffusion model for a bipolar transistor is described. The model is based on Pade approximations of the quasi-static expansions of the base and collector currents, and it gives improved accuracy for the simulation of fast transients as well as for the simulation of periodic operation at high frequencies. The effect of higher order circuit elements on accuracy is demonstrated by calculating a transient response to a step excitation and by determining the scattering parameters for a linearized model. The higher order elements are replaced by an equivalent circuit including only conventional elements and the transient behavior of the model is compared to higher order model simulations

Keywords

S-parameters; bipolar transistors; equivalent circuits; semiconductor device models; transient response; Pade approximations; base current; bipolar transistor; collector currents; equivalent circuit; fast transients; high frequencies; higher order circuit elements; higher order diffusion model; linearized model; periodic operation; quasi-static expansions; scattering parameters; simulation; step excitation; transient response; Bipolar transistors; Circuit simulation; Diodes; Electronic circuits; Equations; Frequency; Laboratories; Microwave transistors; Mobile handsets; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., IEEE International Symposium on

Conference_Location

New Orleans, LA

Type

conf

DOI

10.1109/ISCAS.1990.112699

Filename

112699