Title :
The generation by Gunn diodes based on the GaN, InN, AlN TED´s in biharmonic regime
Author :
Storozhenko, I.P. ; Arkusha, Yu.V.
Author_Institution :
Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The frequency and power capabilities of the nitride semiconductor-A3B5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED´s for the harmonic and biharmonic modes are discussed.
Keywords :
Gunn diodes; Gunn effect; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor device models; wide band gap semiconductors; AlN; GaN; InN; TED; biharmonic mode; frequency capability; harmonic mode; intervalley electron transfer; nitride semiconductor-A3B5-based Gunn diodes; power capability; temperature model; transferred electron device; Anodes; Cathodes; Gallium arsenide; Gallium nitride; Harmonic analysis; Heating; Semiconductor diodes;
Conference_Titel :
Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2010 5th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7470-7
Electronic_ISBN :
978-1-4244-7469-1
DOI :
10.1109/UWBUSIS.2010.5609131
