Title :
Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design
Author :
Pappas, I. ; Tassis, D. ; Siskos, S. ; Dimitriadis, C.A.
Author_Institution :
Phys. Dept., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece
Abstract :
The performance of n-channel symmetrical double-gate (DG) polycrystalline silicon thin-film transistors (polysilicon TFTs) has been investigated with 2-D device simulations. The simulations were conducted based on device characteristic properties, extracted from fabricated single-gate (SG) polysilicon TFTs. Through fitting of the test SG devices, a unique set of density of states was identified, that characterizes the particular technology used. The obtained results reveal that DG TFTs, due to their enhanced gate controllability, exhibit steeper subthreshold slope, lower threshold voltage, higher driving current and better device uniformity compared to their SG counterparts. Implementation of DG TFTs in 2T1C active matrix circuit show that the response time of the circuit can be improved by eight times compared with the conventional SG TFTs and exhibit more stable driving capability due to the improved device uniformity.
Keywords :
LED displays; active networks; elemental semiconductors; semiconductor thin films; silicon; thin film transistors; 2D device simulation; AMOLED pixel design; Si; active matrix organic light emitting display; gate controllability; n-channel symmetrical double-gate polycrystalline silicon thin film transistor; polysilicon TFT; single-gate device; threshold voltage; Active matrix organic light emitting diodes; Logic gates; Numerical models; Object recognition; Switches; Thickness measurement; Thin film transistors; AMOLED; Double-gate thin-film transistor; pixel design;
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
DOI :
10.1109/ICECS.2010.5724513
