Dominant factors determining the threshold voltage for thin film electroluminescent devices

Author

Hirabayashi, Katsuhiko ; Shibata, Tomohiro ; Kozawaguchi, Haruki

Author_Institution

Opto-electronics Lab., NTT, Ibaraki, Japan

fYear

1988

fDate

4-6 Oct. 1988

Firstpage

42

Lastpage

47

Abstract

A description is given of the causes of electric field clamping for thin-film electroluminescent (TFEL) devices. It is shown that clamped electric fields are highly dependent on emission-layer conductivity as well as on crystallinity. Clamped electric field strengths decrease with increases on conductivity, which can be controlled by emission-layer preparation methods and growth conditions. The clamping mechanism is also discussed. It is shown that the TFEL devices having low resistive emission layers produce more Joule heat and the electric field is clamped at a lower electric field strength.<>

Keywords

electroluminescent displays; thin film devices; Joule heat; TFEL; crystallinity; electric field clamping; emission-layer conductivity; low resistive emission layers; thin film electroluminescent devices; threshold voltage; Charge measurement; Current measurement; Density measurement; Electroluminescent devices; Fluid flow; Indium tin oxide; Insulation; Thin film devices; Threshold voltage; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1988., Conference Record of the 1988 International

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/DISPL.1988.11271

Filename

11271