• DocumentCode
    2665762
  • Title

    Source compensation scheme for reducing impact of variability on differential amplifier in 35nm CMOS

  • Author

    Hong, Feng ; Cumming, David R S

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    Variability introduced by intrinsic parameter fluctuations has a great impact on the mismatch performance of nominally identical transistors. We have studied the impact of extreme device variability on the mismatch performance of a differential amplifier by developing an analytical model validated against a detailed 35 nm gate-length MOSFET model set. A novel source compensation concept for minimizing the effects of impact is introduced, and a circuit implementation of the scheme is presented that reduces the standard deviation of the mismatch characteristics by 79%.
  • Keywords
    CMOS analogue integrated circuits; MOSFET; compensation; differential amplifiers; CMOS transistor; MOSFET model; differential amplifier; size 35 nm; source compensation scheme; variability impact reduction; CMOS integrated circuits; Integrated circuit modeling; Logic gates; Variable speed drives;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
  • Conference_Location
    Athens
  • Print_ISBN
    978-1-4244-8155-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2010.5724522
  • Filename
    5724522