Analysis of the cavity geometric effect of liquid-phase epitaxy process

Author

Chao, Fang-Lin ; Wang, Way-Seen

Author_Institution

Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1993

fDate

4-6 Oct 1993

Firstpage

103

Lastpage

106

Abstract

The slider-induced convection of the confined melt cavity in liquid phase epitaxy is calculated by the finite element method. The steady state flux distribution within the melt cavity is analyzed, and the relative momentum transfer on the poly-GaAs melt is calculated for several kinds of cavity height and shape. It is found that the amount of momentum tranfer is related to the cavity height and the skew angle of the cavity, which could change initial growth rate in thin layer device manufacturing

Keywords

III-V semiconductors; convection; finite element analysis; gallium arsenide; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; Ga-GaAs; III-V semiconductors; cavity geometric effect; cavity height; confined melt cavity; finite element method; liquid-phase epitaxy process; poly wafer; relative momentum transfer; skew angle; slider-induced convection; steady state flux distribution; thin layer device manufacturing; Cooling; Epitaxial growth; Epitaxial layers; Finite element methods; Gallium arsenide; Manufacturing; Navier-Stokes equations; Steady-state; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-1424-7

Type

conf

DOI

10.1109/IEMT.1993.398215

Filename

398215