Title :
Analysis of the cavity geometric effect of liquid-phase epitaxy process
Author :
Chao, Fang-Lin ; Wang, Way-Seen
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
The slider-induced convection of the confined melt cavity in liquid phase epitaxy is calculated by the finite element method. The steady state flux distribution within the melt cavity is analyzed, and the relative momentum transfer on the poly-GaAs melt is calculated for several kinds of cavity height and shape. It is found that the amount of momentum tranfer is related to the cavity height and the skew angle of the cavity, which could change initial growth rate in thin layer device manufacturing
Keywords :
III-V semiconductors; convection; finite element analysis; gallium arsenide; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; Ga-GaAs; III-V semiconductors; cavity geometric effect; cavity height; confined melt cavity; finite element method; liquid-phase epitaxy process; poly wafer; relative momentum transfer; skew angle; slider-induced convection; steady state flux distribution; thin layer device manufacturing; Cooling; Epitaxial growth; Epitaxial layers; Finite element methods; Gallium arsenide; Manufacturing; Navier-Stokes equations; Steady-state; Substrates; Temperature;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1993, Fifteenth IEEE/CHMT International
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-1424-7
DOI :
10.1109/IEMT.1993.398215
