The realisation and evaluation of poly-CdSe TFT driving circuits

Author

De Rycke, I. ; De Baets, J. ; Doutreloigne, J. ; Van Calster, A. ; Vanfleteren, J.

Author_Institution

Lab. of Electron., Ghent State Univ., Belgium

fYear

1988

fDate

4-6 Oct. 1988

Firstpage

70

Lastpage

73

Abstract

The design, processing, and evaluation of 25 mu m integrated poly-CdSe thin-film-transistor (TFT) drivers for active matrix-driven LC displays are reported. It is shown that the circuits closely meet the predicted theoretical performance. They appear to be the fastest drivers ever integrated on glass. Yield calculations show that the idea of integrated drivers is a realistic one. However, integrated drivers are attractive only when nearly perfect active matrices can be made. Otherwise, drivers have to be processed on separate substrates.<>

Keywords

II-VI semiconductors; MOS integrated circuits; cadmium compounds; driver circuits; liquid crystal displays; thin film transistors; 25 micron; CdSe; LCD; TFT driving circuits; active matrices; integrated drivers; liquid crystal display; polycrystalline CdSe; thin-film-transistor; Buffer storage; Circuit stability; Clocks; Displays; Driver circuits; Frequency; Laboratories; Latches; Lithography; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1988., Conference Record of the 1988 International

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/DISPL.1988.11277

Filename

11277