DocumentCode :
2666595
Title :
Wafer-scale packaging for FBAR-based oscillators
Author :
Small, Martha ; Ruby, Rich ; Ortiz, Steven ; Parker, Reed ; Zhang, Fan ; Shi, Jianlei ; Otis, Brian
Author_Institution :
Wireless. Semicond. Div., Avago Technol., San Jose, CA, USA
fYear :
2011
fDate :
2-5 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
Recent advances in temperature-compensation for FBAR (Film Bulk Acoustic Resonators) have brought this technology forward as a serious contender in the oscillator marketplace. As with any mechanical resonator oscillator, a cost-effective hermetic package combined with circuit technology are critical for commercial application. Billions of FBAR duplexers have been fabricated using Avago Technologies´ wafer-scale packaging process, whereby a silicon lid wafer is Au-diffusion-bonded to a base FBAR wafer to make a robust, hermetic package. This paper presents a method for integrating circuitry into the lid wafer to form a sub-0.1 mm3, sub mW, 1.5 GHz temperature-compensated chip-scale oscillator. Circuit integration, testing and performance will be discussed.
Keywords :
bulk acoustic wave devices; oscillators; resonators; wafer level packaging; Avago technology wafer-scale packaging process; FBAR duplexers; FBAR-based oscillators; circuit technology; cost-effective hermetic package; film bulk acoustic resonator based oscillators; frequency 1.5 GHz; mechanical resonator oscillator; silicon lid wafer; Film bulk acoustic resonators; Frequency measurement; Phase noise; Resonant frequency; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
Conference_Location :
San Fransisco, CA
ISSN :
1075-6787
Print_ISBN :
978-1-61284-111-3
Type :
conf
DOI :
10.1109/FCS.2011.5977848
Filename :
5977848
Link To Document :
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