• DocumentCode
    2666595
  • Title

    Wafer-scale packaging for FBAR-based oscillators

  • Author

    Small, Martha ; Ruby, Rich ; Ortiz, Steven ; Parker, Reed ; Zhang, Fan ; Shi, Jianlei ; Otis, Brian

  • Author_Institution
    Wireless. Semicond. Div., Avago Technol., San Jose, CA, USA
  • fYear
    2011
  • fDate
    2-5 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recent advances in temperature-compensation for FBAR (Film Bulk Acoustic Resonators) have brought this technology forward as a serious contender in the oscillator marketplace. As with any mechanical resonator oscillator, a cost-effective hermetic package combined with circuit technology are critical for commercial application. Billions of FBAR duplexers have been fabricated using Avago Technologies´ wafer-scale packaging process, whereby a silicon lid wafer is Au-diffusion-bonded to a base FBAR wafer to make a robust, hermetic package. This paper presents a method for integrating circuitry into the lid wafer to form a sub-0.1 mm3, sub mW, 1.5 GHz temperature-compensated chip-scale oscillator. Circuit integration, testing and performance will be discussed.
  • Keywords
    bulk acoustic wave devices; oscillators; resonators; wafer level packaging; Avago technology wafer-scale packaging process; FBAR duplexers; FBAR-based oscillators; circuit technology; cost-effective hermetic package; film bulk acoustic resonator based oscillators; frequency 1.5 GHz; mechanical resonator oscillator; silicon lid wafer; Film bulk acoustic resonators; Frequency measurement; Phase noise; Resonant frequency; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
  • Conference_Location
    San Fransisco, CA
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-61284-111-3
  • Type

    conf

  • DOI
    10.1109/FCS.2011.5977848
  • Filename
    5977848