DocumentCode

2666701

Title

Growth Mechanism Of Planar-type GaAs Quantum Wire Crystals

Author

Katsuyama, T. ; Hiruma, K. ; Haraguchi, K. ; Hosomi, K. ; Shlrai, M. ; Shigeta, J.

Author_Institution

Central Research Laboratoy Hitachi Ltd., Kokubunji, Tokyo 185, JAPAN

fYear

1997

fDate

14-18 July 1997

Firstpage

55

Lastpage

56

Keywords

Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Impurities; Optical polarization; Solids; Substrates; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-3889-8

Type

conf

DOI

10.1109/CLEOPR.1997.610459

Filename

610459