DocumentCode :
2666717
Title :
Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity
Author :
Hannigan, J. ; Guoqiang Cui ; Loeckenhoff, R. ; Foster, D. ; Matinaga, F.M. ; Wang, H. ; Raymer, M.G. ; Holland, M. ; Bhonghale, S. ; Mosor, S. ; Chatterjee, S. ; Gibbs, H.M. ; Khitrova, G.
Author_Institution :
Oregon Center for Opt., Oregon Univ., Eugene, OR, USA
fYear :
2003
fDate :
6-6 June 2003
Abstract :
A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.
Keywords :
III-V semiconductors; gallium arsenide; micro-optics; microcavities; mirrors; optical fabrication; quantum electrodynamics; quantum optics; semiconductor quantum dots; GaAs; cavity mode; cavity-QED strong coupling; external optical microcavity; hemispherical cavity; interface-fluctuation; semiconductor DBR mirror; semiconductor quantum dot; Distributed Bragg reflectors; Electrodynamics; Gallium arsenide; Information processing; Microstructure; Mirrors; Optical coupling; Optical device fabrication; Quantum dots; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
Type :
conf
DOI :
10.1109/QELS.2003.238565
Filename :
1276044
Link To Document :
بازگشت