• DocumentCode
    2667147
  • Title

    Introducing porous silicon as a getter using the self aligned maskless process to enhance the quality factor of packaged MEMS resonators

  • Author

    Mohammad, Wajihuddin ; Wilson, Chester ; Kaajakari, Ville

  • Author_Institution
    Inst. for Micromanufacturing (IfM), Louisiana Tech Univ., Ruston, LA, USA
  • fYear
    2011
  • fDate
    2-5 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Vacuum encapsulated MEMS resonators are used in frequency references and gyroscopes. We present the use of porous silicon as a getter material for MEMS devices. Two types of devices were fabricated using the electrochemical etching and compared for quality factor. One type was with a cavity in the substrate of an SOI die, which helps in reducing the parasitic capacitance and the air damping. The other was with cavity and porous silicon (getter) in the substrate. The measured resonant profiles show that the device with the getter material has 2× higher quality factor than the one without the getter.
  • Keywords
    Q-factor; etching; micromechanical resonators; silicon; MEMS device; air damping; electrochemical etching; gyroscope; parasitic capacitance; porous silicon; quality factor; self aligned maskless process; vacuum encapsulated MEMS resonator; Cavity resonators; Damping; Gettering; Micromechanical devices; Q factor; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
  • Conference_Location
    San Fransisco, CA
  • ISSN
    1075-6787
  • Print_ISBN
    978-1-61284-111-3
  • Type

    conf

  • DOI
    10.1109/FCS.2011.5977875
  • Filename
    5977875