DocumentCode
2667147
Title
Introducing porous silicon as a getter using the self aligned maskless process to enhance the quality factor of packaged MEMS resonators
Author
Mohammad, Wajihuddin ; Wilson, Chester ; Kaajakari, Ville
Author_Institution
Inst. for Micromanufacturing (IfM), Louisiana Tech Univ., Ruston, LA, USA
fYear
2011
fDate
2-5 May 2011
Firstpage
1
Lastpage
4
Abstract
Vacuum encapsulated MEMS resonators are used in frequency references and gyroscopes. We present the use of porous silicon as a getter material for MEMS devices. Two types of devices were fabricated using the electrochemical etching and compared for quality factor. One type was with a cavity in the substrate of an SOI die, which helps in reducing the parasitic capacitance and the air damping. The other was with cavity and porous silicon (getter) in the substrate. The measured resonant profiles show that the device with the getter material has 2× higher quality factor than the one without the getter.
Keywords
Q-factor; etching; micromechanical resonators; silicon; MEMS device; air damping; electrochemical etching; gyroscope; parasitic capacitance; porous silicon; quality factor; self aligned maskless process; vacuum encapsulated MEMS resonator; Cavity resonators; Damping; Gettering; Micromechanical devices; Q factor; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
Conference_Location
San Fransisco, CA
ISSN
1075-6787
Print_ISBN
978-1-61284-111-3
Type
conf
DOI
10.1109/FCS.2011.5977875
Filename
5977875
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