Sapphire loaded microwave resonators with enhanced quality factor

Author

Ivanov, E.N. ; Kalinichev, V.I. ; Blair, D.G.

Author_Institution

Dept. of Phys., Western Australia Univ., Nedlands, WA, Australia

fYear

1994

fDate

1-3 Jun 1994

Firstpage

500

Lastpage

505

Abstract

This paper describes the properties of two-dimensional shielded dielectric ring resonators consisting of a few coaxial dielectric layers surrounded by the coaxial metal shield. It is shown that the Q factor of such resonators excited in whispering-gallery modes increases with azimuthal mode number due to the effective concentration of electromagnetic energy outside the dielectric in the inner region of the resonator as well as in the gap between the dielectric layers. At moderately high azimuthal numbers (m=15...25) the Q-factor can significantly (2 to 3 times) exceed the limit imposed by the intrinsic losses in the dielectric

Keywords

Q-factor; dielectric resonators; frequency stability; microwave oscillators; numerical analysis; sapphire; Q-factor; azimuthal mode number; coaxial dielectric layers; coaxial metal shield; enhanced quality factor; intrinsic losses; numerical analysis; sapphire loaded microwave resonators; two-dimensional shielded dielectric ring resonators; whispering-gallery modes; Coaxial components; Dielectric losses; Equations; Optical resonators; Optical ring resonators; Optical surface waves; Q factor; Surface waves; Temperature; Whispering gallery modes;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 1994. 48th., Proceedings of the 1994 IEEE International

Conference_Location

Boston, MA

Print_ISBN

0-7803-1945-1

Type

conf

DOI

10.1109/FREQ.1994.398290

Filename

398290