DocumentCode
2667213
Title
A 3.2Gbps single-ended receiver using self-reference generation technique for DRAM interface
Author
Seol, Hyeon-Cheon ; Song, Jun-Yong ; Kwak, Kang-Sub ; Kwon, Oh-Kyong
Author_Institution
Div. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
671
Lastpage
674
Abstract
A 3.2 Gbps single-ended receiver using self-reference generation technique for DRAM interface is designed by using a 0.18 μm CMOS process. A multi-drop single-ended signaling system has limited bandwidth because of both inter-symbol interference (ISI) and reference voltage noise. In order to recover the data without using the equalizer and the reference line, the self-reference generation technique is proposed. The single-ended receiver generates the reference voltage by using the previous bit for each bit. The circuit occupies 140 × 120 μm2 and dissipates 40 mW at the supply voltage of 1.8V when 3.2 Gbps of data is transmitted over the channel with 18.55-dB loss at the frequency of 1.6 GHz.
Keywords
CMOS integrated circuits; DRAM chips; integrated circuit noise; microwave receivers; reference circuits; CMOS process; DRAM interface; frequency 1.6 GHz; frequency 3.2 GHz; inter-symbol interference; multidrop single-ended signaling; reference voltage noise; self-reference generation; single-ended receiver; size 0.18 mum; voltage 1.8 V; Random access memory; Receivers; DRAM chip; I/O; inter-symbol interference (ISI); pseudo-differential signaling; single-ended signaling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location
Athens
Print_ISBN
978-1-4244-8155-2
Type
conf
DOI
10.1109/ICECS.2010.5724601
Filename
5724601
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