Title :
Assessment of off-state negative gate voltage requirements for IGBTs
Author :
McNeill, N. ; Finney, S.J. ; Williams, B.W.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Abstract :
This paper addresses the need for negative gate bias with IGBT devices that experience a dv/dt when in the off-state. Factors considered include gate bias voltage, gate impedance, reapplied dv/dt and case temperature. Experimental results for a high-voltage high-current IGBT support the assessment of these factors
Keywords :
electric impedance; insulated gate bipolar transistors; power transistors; semiconductor device testing; IGBT devices; case temperature; gate bias voltage; gate impedance; high-current IGBT; high-voltage IGBT; negative gate bias; off-state negative gate voltage requirements; turn on mechanism; Capacitance; Circuits; Diodes; Impedance; Insulated gate bipolar transistors; Leg; Switches; Tail; Temperature; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548646
