Title :
Parasitic Gate Resistance and Switching Performance
Author_Institution :
Fairchild Semicond., San Jose, CA
Abstract :
In this paper we discusses in details the effect of the gate equivalent series resistance, ESR, of switching power MOSFETs on different aspects of loss mechanisms when used in DC-DC converters. The loss mechanisms addressed are current rise and fall times, die current distribution and localized shoot through
Keywords :
DC-DC power convertors; electric resistance; losses; power MOSFET; switching convertors; DC-DC converters; current rise; die current distribution; fall times; localized shoot through losses; parasitic gate equivalent series resistance; switching loss mechanisms; switching power MOSFET; Current distribution; DC-DC power converters; Equations; MOSFETs; Paramagnetic resonance; Performance loss; Power semiconductor switches; Roentgenium; Temperature distribution; Voltage; Current Rise and Fall Times; DC-DC Converter power loss; Gate ESR; Shoot Through; component;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0448-7
DOI :
10.1109/IPEMC.2006.4778345
