DocumentCode
2667344
Title
Parasitic Gate Resistance and Switching Performance
Author
Elbanhawy, Alan
Author_Institution
Fairchild Semicond., San Jose, CA
Volume
3
fYear
2006
fDate
14-16 Aug. 2006
Firstpage
1
Lastpage
4
Abstract
In this paper we discusses in details the effect of the gate equivalent series resistance, ESR, of switching power MOSFETs on different aspects of loss mechanisms when used in DC-DC converters. The loss mechanisms addressed are current rise and fall times, die current distribution and localized shoot through
Keywords
DC-DC power convertors; electric resistance; losses; power MOSFET; switching convertors; DC-DC converters; current rise; die current distribution; fall times; localized shoot through losses; parasitic gate equivalent series resistance; switching loss mechanisms; switching power MOSFET; Current distribution; DC-DC power converters; Equations; MOSFETs; Paramagnetic resonance; Performance loss; Power semiconductor switches; Roentgenium; Temperature distribution; Voltage; Current Rise and Fall Times; DC-DC Converter power loss; Gate ESR; Shoot Through; component;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference, 2006. IPEMC 2006. CES/IEEE 5th International
Conference_Location
Shanghai
Print_ISBN
1-4244-0448-7
Type
conf
DOI
10.1109/IPEMC.2006.4778345
Filename
4778345
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