DocumentCode :
2667353
Title :
Bulk modes in silicon crystal silicon
Author :
Ho, Gavin K. ; Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution :
ParibX, Inc., Mountain View, CA, USA
fYear :
2011
fDate :
2-5 May 2011
Firstpage :
1
Lastpage :
6
Abstract :
Bulk dilation modes in rectangular plates of particular orientations in single crystal silicon are found to have distinct advantages over to those in isotropic materials. Finite element modeling using an anisotropic model reveals plates aligned to the <;110>; direction in (100) silicon have modes which offer excellent capacitive coupling and good isolation to the supports. Low impedance and high Q are predicted for select geometries. Experimental results are included, showing a 100-MHz resonator having an unloaded Q of 90,000, which demonstrate an f-Q product of ~1×1013.
Keywords :
elemental semiconductors; micromechanical resonators; silicon; Si; anisotropic model; bulk dilation modes; capacitive coupling; finite element modeling; frequency 100 MHz; isotropic materials; micromechanical resonators; rectangular plates; silicon crystal silicon; Couplings; Dynamics; Electrodes; Geometry; Shape; Silicon; Three dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International
Conference_Location :
San Fransisco, CA
ISSN :
1075-6787
Print_ISBN :
978-1-61284-111-3
Type :
conf
DOI :
10.1109/FCS.2011.5977882
Filename :
5977882
Link To Document :
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