Title :
High frequency monolithic crystal filters (MCF) using piezoelectric elements operating at the fundamental frequency 30-150 MHz and their adjustment method
Author :
Volkov, S.V. ; Mostiaev, V.A. ; Grigorjev, L.V. ; Frolov, V.S. ; Ermakov, Y.M.
Author_Institution :
Scientific Res. Inst. Phonon, Moscow, Russia
Abstract :
The application of ion-plasma technology enabled us to develop and put into production MCFs using piezoelectric elements with reverse mesa structure operating at the fundamental frequency over the range from 30 to 50 MHz. The filters are manufactured in flat enclosures with the dimensions 12.0×12.0×4.2 mm. The advantage of this adjustment method consists in a practically maskless technology because no necessity exists in the mask alignment with the electrode configuration, which would be difficult with a gap of 0.05-0.18 mm. The parameters of 2nd order MCF FP2P-486 operating at the frequencies of 34338, 68736 and 149950 kHz and their frequency attenuation characteristics are given, including frequency attenuation characteristic of 4th order-MCF at 149950 kHz, synthesized from two 2nd order MCFs
Keywords :
crystal filters; integrated circuit technology; monolithic integrated circuits; sputter etching; 149950 kHz; 2nd order MCF FP2P-486; 30 to 50 MHz; 34338 kHz; 4th order-MCF; 68736 kHz; flat enclosures; frequency attenuation characteristic; frequency attenuation characteristics; fundamental frequency; high frequency monolithic crystal filters; ion-plasma technology; maskless technology; piezoelectric elements; reverse mesa structure; Attenuation; Bonding; Chemical elements; Chemical technology; Electrodes; Etching; Filters; Frequency; Production; Transistors;
Conference_Titel :
Frequency Control Symposium, 1994. 48th., Proceedings of the 1994 IEEE International
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1945-1
DOI :
10.1109/FREQ.1994.398305