Title :
Front-end building blocks using the Glasgow 0.2 μm GaAs MESFET process
Author :
Thayne, Iain ; Elgaid, Khaled ; Borsosfoldi, Zoltan ; Webster, Danny ; Murad, Saad ; Ward, Bill ; Ferguson, Susan ; Cameron, Nigel ; Edgar, David ; Valin, Isabelle ; Holland, Martin ; Taylor, Michael ; Haigh, David ; Beaumont, Steven ; Sewell, John
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
In this paper, we have demonstrated two monolithic microwave integrated circuits fabricated using the Glasgow 0.2 μm GaAs MESFET MMIC process, namely a 1 GHz active resonator and a 35 GHz integrated LNA/mixer. An identical process was used for the realisation of both these circuits. This demonstrates that with an advanced MMIC process, both high frequency and high functionality circuits can be realised, as will be required to meet the needs of future wireless communication systems
Keywords :
gallium arsenide; 0.2 micron; 1 GHz; 35 GHz; GaAs; GaAs MESFET process; Glasgow 0.2 μm process; MESFET MMIC process; active resonator; front-end building blocks; integrated LNA/mixer; monolithic microwave integrated circuits;
Conference_Titel :
RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026), IEE Colloquium
Conference_Location :
London
DOI :
10.1049/ic:19970168
