DocumentCode
2667483
Title
Front-end building blocks using the Glasgow 0.2 μm GaAs MESFET process
Author
Thayne, Iain ; Elgaid, Khaled ; Borsosfoldi, Zoltan ; Webster, Danny ; Murad, Saad ; Ward, Bill ; Ferguson, Susan ; Cameron, Nigel ; Edgar, David ; Valin, Isabelle ; Holland, Martin ; Taylor, Michael ; Haigh, David ; Beaumont, Steven ; Sewell, John
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1997
fDate
35474
Firstpage
42552
Lastpage
42556
Abstract
In this paper, we have demonstrated two monolithic microwave integrated circuits fabricated using the Glasgow 0.2 μm GaAs MESFET MMIC process, namely a 1 GHz active resonator and a 35 GHz integrated LNA/mixer. An identical process was used for the realisation of both these circuits. This demonstrates that with an advanced MMIC process, both high frequency and high functionality circuits can be realised, as will be required to meet the needs of future wireless communication systems
Keywords
gallium arsenide; 0.2 micron; 1 GHz; 35 GHz; GaAs; GaAs MESFET process; Glasgow 0.2 μm process; MESFET MMIC process; active resonator; front-end building blocks; integrated LNA/mixer; monolithic microwave integrated circuits;
fLanguage
English
Publisher
iet
Conference_Titel
RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026), IEE Colloquium
Conference_Location
London
Type
conf
DOI
10.1049/ic:19970168
Filename
597789
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