A low-distortion GaAs variable attenuator IC for digital mobile communication system

Author

Miyatsuji, K. ; Ueda, D.

Author_Institution

Matsushita Electron. Corp., Osaka, Japan

fYear

1995

fDate

15-17 Feb. 1995

Firstpage

42

Lastpage

43

Abstract

This GaAs variable RF attenuator IC shows extremely low distortion with a single positive control voltage. The low-distortion characteristic is realized by employing octal-gate MESFET structures as the voltage-variable resistors. The measured results at 1 GHz show insertion loss lower than 2.5 dB, maximum attenuation over 20 dB and the 3rd order intermodulation distortion (IM3) lower than -50 dBc at 0 dBm input power. The return loss is lower than -30 dB in the whole attenuation range. The present GaAs variable attenuator IC is suitable for transmitting receiving power control for a variety of digital mobile communication systems such as TDMA or CDMA.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; attenuators; digital radio; field effect analogue integrated circuits; gallium arsenide; intermodulation distortion; land mobile radio; -30 dB; 1 GHz; 2.5 dB; CDMA; GaAs; IM3; IMD; TDMA; digital mobile communication system; insertion loss; intermodulation distortion; low-distortion attenuator IC; low-distortion characteristic; octal-gate MESFET structures; return loss; variable RF attenuator IC; voltage-variable resistors; Attenuation; Attenuators; Digital integrated circuits; Distortion measurement; Gallium arsenide; MESFETs; Radio frequency; Radiofrequency integrated circuits; Resistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-2495-1

Type

conf

DOI

10.1109/ISSCC.1995.535268

Filename

535268