Title :
A New Fast and Rugged 100 V Power MOSFET
Author :
Siemieniec, Ralf ; Hirler, Franz ; Schlögl, Andreas ; Rösch, Maximilian ; Soufi-Amlashi, Negar ; Ropohl, Jan ; Hiller, Uli
Author_Institution :
Infineon Technol. Austria AG, Villach
fDate :
Aug. 30 2006-Sept. 1 2006
Abstract :
A new, rugged 100 V power MOSFET of the OptiMOStrade 2-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance RON with outstanding switching properties. The technology also offers a small gate charge QG and a small gate resistance RG. In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge Q RR. Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control
Keywords :
compensation; power MOSFET; power semiconductor diodes; 100 V; AC-DC converters; Class-D amplifiers; DC-DC converters; OptiMOStrade 2-family; compensation principles; freewheeling diode; low on-state resistance; motor control; power MOSFET; server topologies; small gate charge; small gate resistance; soft reverse-recovery; switching properties; telecommunication topologies; Circuit topology; Immune system; MOSFET circuits; Motor drives; Power MOSFET; Pulse width modulation; Roentgenium; Semiconductor diodes; Switching loss; Voltage;
Conference_Titel :
Power Electronics and Motion Control Conference, 2006. EPE-PEMC 2006. 12th International
Conference_Location :
Portoroz
Print_ISBN :
1-4244-0121-6
DOI :
10.1109/EPEPEMC.2006.4778371
