Title :
A pixel fabrication process for low-energy X-ray imaging applications
Author :
Park, B. ; Murthy, R.V.R. ; Nathan, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
In this paper, we discuss various design and technological issues related to the process integration of a Mo/a-Si:H Schottky diode and a thin film transistor (TFT) to fabricate an X-ray imaging pixel. The Schottky diode is intended as an X-ray detector whereas the TFT serves as a switching element for charge readout. We compare two geometrically different pixel structures considering design aspects such as fill factor and leakage current
Keywords :
Schottky diodes; X-ray detection; X-ray imaging; amorphous semiconductors; elemental semiconductors; hydrogen; molybdenum; silicon; thin film transistors; Mo-Si:H; Schottky diode; X-ray detector; charge readout; fill factor; leakage current; low-energy X-ray imaging applications; pixel fabrication process; process integration; switching element; thin film transistor; Application software; Electrons; Fabrication; Optical imaging; Pixel; Schottky diodes; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Conference_Location :
Waterloo, Ont.
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.685620
