• DocumentCode
    2667791
  • Title

    A 32-channel ASIC for X-Ray detectors

  • Author

    Picolli, L. ; Caccia, S. ; Grassi, M. ; Malcovati, P. ; Bertuccio, G.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Pavia, Pavia, Italy
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    807
  • Lastpage
    810
  • Abstract
    In this paper we present a 32-channel integrated circuit (ASIC) designed for a multi-anode silicon drift detector for X-ray imaging and spectroscopy (0.5 ÷ 100 keV). The ASIC includes 32 read-out front-end channels (ROC), each consisting of a low-noise preamplifier, a second-order RC-CR pulse shaper, a peak stretcher, an amplitude and a peak discriminator, as well as a reset and pile-up rejection circuit. The ASIC includes also a digital configuration register, supporting daisy-chain connection, for setting the ROC parameters for signal processing. At room temperature the equivalent noise charge is 18 e2212;rms and the linearity error is lower than ±5% over the complete input range. The ASIC has been designed in a 0.35-μm CMOS technology with a 3.3-V power supply. A single ROC occupies an area of 200 × 380 μm2. The area of the whole ASIC is 6500 × 2260 μm2 and the power consumption is 0.4 mW per channel.
  • Keywords
    CMOS integrated circuits; X-ray detection; application specific integrated circuits; integrated circuit noise; low noise amplifiers; preamplifiers; ASIC; CMOS technology; X-ray detectors; X-ray imaging; X-ray spectroscopy; daisy-chain connection; digital configuration register; equivalent noise charge; linearity error; low-noise preamplifier; multi-anode silicon drift detector; peak discriminator; peak stretcher; pile-up rejection circuit; power 0.4 mW; read-out front-end channels; second-order RC-CR pulse shaper; signal processing; size 0.35 mum; temperature 293 K to 298 K; voltage 3.3 V; Detectors; Signal resolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
  • Conference_Location
    Athens
  • Print_ISBN
    978-1-4244-8155-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2010.5724635
  • Filename
    5724635