• DocumentCode
    2668302
  • Title

    Analytical model for p-n junctions under point source illumination

  • Author

    Blanco-Filgueira, B. ; López, P. ; Döge, J.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Univ. of Santiago de Compostela, Santiago de Compostela, Spain
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    906
  • Lastpage
    909
  • Abstract
    An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.
  • Keywords
    CMOS image sensors; nanofabrication; p-n junctions; photodiodes; semiconductor device models; CMOS image sensor; complementary metal-oxide semiconductor image sensors; device fabrication; junction photodiodes; p-n junction; photoresponse; pixels; size 90 nm; Image sensors; Modeling; Photodiodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
  • Conference_Location
    Athens
  • Print_ISBN
    978-1-4244-8155-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2010.5724659
  • Filename
    5724659
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2668302