Title :
Reliability of active RF filters in nanoscale region
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX
Abstract :
Hot carrier effect on active RF filter performance is studied systematically for 0.16 mum CMOS technology. Active inductor based RF filter can be used for RF and IF filters in wireless communications. Hot carrier interface state generation (HCI) and time-dependent dielectric breakdown (TDDB) effects degrade the device parameters, and in turn degrade the performance of the active inductors and filters. A band-pass filter centered at 1.8 GHz is designed and the HCI and TDDB effects are investigated
Keywords :
CMOS integrated circuits; UHF filters; active filters; band-pass filters; circuit reliability; electric breakdown; hot carriers; 0.16 micron; 1.8 GHz; CMOS technology; UHF filters; active filters; band-pass filters; circuit reliability; hot carrier effect; time-dependent dielectric breakdown; wireless communications; Active filters; Active inductors; Band pass filters; CMOS technology; Degradation; Hot carrier effects; Hot carriers; Human computer interaction; Radio frequency; Wireless communication;
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
DOI :
10.1109/DTIS.2006.1708668
