Trends in tests and failure mechanisms in deep sub-micron technologies

Author

Hamdioui, Said ; AL-Ars, Zaid ; Mhamdi, Lotfi ; Gaydadjiev, Georgi ; Vassiliadis, Stamatis

Author_Institution

Fac. of EE, Math. & CS, Delft Univ. of Technol.

fYear

2006

fDate

5-7 Sept. 2006

Firstpage

216

Lastpage

221

Abstract

The increasing integration density of semiconductor devices and the usage of new materials and innovative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep submicron manufacturing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production

Keywords

failure analysis; integrated circuit modelling; integrated circuit testing; semiconductor devices; deep submicron manufacturing technologies; deep submicron technologies; failure mechanism; fault models; integrated circuit production; manufacturing techniques; semiconductor devices; tests mechanism; Circuit faults; Computer aided manufacturing; Computer integrated manufacturing; Failure analysis; Integrated circuit modeling; Integrated circuit testing; Mathematics; Production; Semiconductor device manufacture; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on

Conference_Location

Tunis

Print_ISBN

0-7803-9726-6

Type

conf

DOI

10.1109/DTIS.2006.1708677

Filename

1708677