DocumentCode
2668599
Title
A true zero-load stable CMOS capacitor-free low-dropout regulator with excessive gain reduction
Author
Hu, John ; Ismail, Mohammed
Author_Institution
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
978
Lastpage
981
Abstract
External capacitor-free low-dropout regulators (LDO) are popular power management modules within integrated circuits (IC) for space-limited, low Bill-of-Material (BoM) applications. Conventional Miller pole-split based CMOS capacitor-free LDOs, however, suffer from zero-load oscillation, and shortcut solution such as using “stay alive” output current degrades the power efficiency. The purpose of this paper is to solve the oscillation problem without sacrificing efficiency, and a true zero-load stable (TZLS) design with excessive gain reduction is proposed. Two otherwise identical, 2.5-5 V to 2.3 V, 0-100 mA capacitor-free LDOs are designed and implemented in ON Semi 0.5 μm CMOS process, one using the conventional method, and the other using the proposed design. Though both methods are effective when “stay alive” current is available, only the proposed LDO remains stable when “stay alive” is removed under tighter efficiency requirement. This research enables CMOS capacitor-free LDOs to be truly robust and power efficient, ideal for future “green” electronic products.
Keywords
CMOS integrated circuits; circuit oscillations; integrated circuit design; BoM applications; Miller pole-split based CMOS capacitor-free LDO; ON Semi CMOS process; TZLS design; bill-of-material applications; capacitor-free low-dropout regulator; current 0 mA to 100 mA; gain reduction; green electronic products; integrated circuits; power management modules; size 0.5 mum; stay alive current; true zero-load stable CMOS LDO; voltage 2.5 V to 5 V; zero-load oscillation; CMOS integrated circuits; Logic gates; Regulators;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location
Athens
Print_ISBN
978-1-4244-8155-2
Type
conf
DOI
10.1109/ICECS.2010.5724677
Filename
5724677
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