DocumentCode
2668627
Title
Theory of ultrafast nonlinear refraction in semiconductor heterostructure waveguides
Author
Hutchings, D.C.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2003
fDate
6-6 June 2003
Abstract
Considering the symmetry of the third-order susceptibility tensor elements for semiconductor heterostructures results in 8 independent elements for [001] growth. Nonlinear refraction coefficients are derived and the change in dimensionality with intermixing is discussed.
Keywords
high-speed optical techniques; light refraction; nonlinear optical susceptibility; optical materials; optical waveguides; semiconductor superlattices; nonlinear refraction coefficients; semiconductor heterostructures; semiconductor waveguides; third-order susceptibility; ultrafast nonlinear refraction; Anisotropic magnetoresistance; Gallium arsenide; Nonlinear optics; Optical polarization; Optical refraction; Optical waveguides; Semiconductor waveguides; Tensile stress; Ultrafast optics; Waveguide theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238107
Filename
1276189
Link To Document