Title :
Novel FinFET domino logic circuit using dual keepers
Author :
Roy, Tonmoy ; Imam-Uz-Zaman ; Islam, Md Shariful
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
Extreme power density due to leakage currents and scaling of CMOS technology in the nanometer region using single gate MOSFET has become tentative. To alleviate this situation double gate devices like the FinFET can be used, which provide significantly lower leakage and considerably superior control over the current through it. In this paper we utilize the property of FinFET to switch dynamically between low and high threshold devices to design a novel domino logic style circuit configuration. Domino logic circuits are preferred for high speed operations but they suffer from considerable power loss. The proposed dual keeper domino logic circuit achieves the performance of traditional domino logic with significantly reduced power consumption and increased evaluation speed while maintaining similar input noise margin.
Keywords :
CMOS digital integrated circuits; MOSFET; integrated circuit design; logic circuits; CMOS technology; FinFET; domino logic style circuit configuration design; double gate devices; dual keepers; evaluation speed; extreme power density; high speed operations; high threshold devices; input noise margin; leakage currents; low threshold devices; nanometer region; single gate MOSFET; CMOS integrated circuits; FinFETs; Logic circuits; Logic gates; Noise; Standards; Domino Logic; FinFET; High Speed; Independent Gate; Low Power;
Conference_Titel :
Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4820-8
DOI :
10.1109/ICEEICT.2014.6919057