DocumentCode
2668897
Title
A 1 Gsample/s 8 b silicon bipolar track and hold IC
Author
Pregardier, B. ; Langmann, U. ; Hillery, W.J.
Author_Institution
Lehrstuhl fur Elektronische, Ruhr-Univ., Bochum, Germany
fYear
1995
fDate
15-17 Feb. 1995
Firstpage
58
Lastpage
59
Abstract
High-performance data acquisition systems like digitizing oscilloscopes require both high sample rates and fine resolution, two competing requirements. A track-and-hold (TH) circuit is a key component of such systems. So far, there is no silicon bipolar TH IC for 1 Gsample/s with 8 b linearity. Even with modern GaAs processes this performance has not yet been surpassed. This TH is fabricated in a silicon bipolar production process, featuring a low component count, all-npn transistor design, 460 mW power consumption (excluding the test buffer), and less than 62.4 dB total harmonic distortion (THD), corresponding to 8.4 b linearity, up to 1.2 Gsample/s over the full Nyquist band. This TH is suitable as an on-chip subcomponent for 1 Gsample/s 8 b silicon integrated analog-to-digital converter (ADC) systems, such as full flash or pipeline ADCs.
Keywords
bipolar analogue integrated circuits; 460 mW; 8 bit; Nyquist band; analog-to-digital converter systems; bipolar production process; bipolar track and hold IC; component count; data acquisition systems; full flash ADCs; pipeline ADCs; power consumption; resolution; sample rates; total harmonic distortion; Bipolar integrated circuits; Data acquisition; Energy consumption; Gallium arsenide; Linearity; Oscilloscopes; Production; Silicon; Testing; Total harmonic distortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-2495-1
Type
conf
DOI
10.1109/ISSCC.1995.535275
Filename
535275
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