Title :
Performance analysis of a designed 635nm compressively strained red laser under variant temperature condition
Author :
Alam, Tawsif Ibne ; Basak, Raja
Author_Institution :
Dept. of EEE, American Int. Univ.-Bangladesh, Dhaka, Bangladesh
Abstract :
In this work, the effects of temperature on the output power and modulation response of a designed 635nm Red Laser have been theoretically determined. At 300K, for a Ga0.48In0.52P/(Al0.36Ga0.64)0.52In0.48P compressively strained MQW Red Diode Laser, the maximum steady state output power has been found out as 105.9mW at an injection current of 90mA, with a threshold current as low as 8.8mA. Furthermore, increase in temperature reveals a red shift of power vs. wavelength characteristics and intensity fluctuation with a peak intensity at 639.8nm at 330K temperature, decrease in overall output power, increase in threshold current and a maximum -3dB modulation bandwidth of 18.3 GHz at a temperature of 300K.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; intensity modulation; optical design techniques; optical modulation; quantum well lasers; red shift; thermo-optical effects; Ga0.48In0.52P-(Al0.36Ga0.64)0.52In0.48P; MQW red diode laser; bandwidth 18.3 GHz; compressively strained red laser; current 8.8 mA; current 90 mA; injection current; intensity fluctuation; modulation bandwidth; modulation response; multiple quantum well lasers; output power; performance analysis; red shift; temperature 300 K; temperature 330 K; temperature effects; threshold current; variant temperature condition; wavelength 635 nm; wavelength 639.8 nm; Equations; Materials; Mathematical model; Power generation; Semiconductor lasers; Temperature; Modulation bandwidth; Output Power; Red Laser; Temperature;
Conference_Titel :
Electrical Engineering and Information & Communication Technology (ICEEICT), 2014 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-4820-8
DOI :
10.1109/ICEEICT.2014.6919071
