Title :
Effects of temperature on high power low on-voltage MOS-bipolar transistor module
Author_Institution :
Dept. of Phys., Nairobi Univ., Kenya
Abstract :
The temperature-dependence problem of power transistors under the static and switching condition has been addressed. A novel development of the MOS-bipolar hybrid module concept facilitates the neutralization of the thermal delays in the turn-off, and simultaneously provides usually low on-resistance with rugged dV/dt. A technique previously used to restore the nearly constant current (high output slope resistance) of intensively static self-heated MOSFETs has been extended to MOS-bipolar hybrid power devices
Keywords :
power bipolar transistors; MOS-bipolar transistor; constant current; dV/dt; hybrid power devices; neutralization; on-resistance; on-voltage; power transistors; static condition; switching condition; temperature effects; thermal delays; turn-off; Bipolar transistors; CMOS logic circuits; Insulation; MOSFETs; Physics; Power semiconductor switches; Power transistors; Pulse width modulation; Solid state circuits; Temperature dependence;
Conference_Titel :
AFRICON '92 Proceedings., 3rd AFRICON Conference
Conference_Location :
Ezulwini Valley
Print_ISBN :
0-7803-0835-2
DOI :
10.1109/AFRCON.1992.624424
