Title :
Single-photon emission from highly uniform site-controlled semiconductor quantum dots
Author :
Baier, M. ; Watanabe, S. ; Pelucchi, E. ; Kapon, E. ; Varoutsis, S. ; Gallart, M. ; Robert-Philip, I. ; Abram, I.
Author_Institution :
Inst. of Quantum Photonics & Electron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
We observed anti-bunching of photons emitted from (In)GaAs/AlGaAs quantum dots grown on pyramidal recess patterns. The control on dot position, photon energy (1.43-1.65 eV) and small inhomogeneous broadening (10 meV) make them useful in practical single-photon emitters.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor quantum dots; spectral line broadening; 1.43 to 1.65 eV; InGaAs-AlGaAs; inhomogeneous broadening; photon antibunching; semiconductor quantum dots; single-photon emission; single-photon emitters; Autocorrelation; Optical control; Optical filters; Photonics; Quantum computing; Quantum dots; Size control; Stationary state; Stimulated emission; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238261
