DocumentCode
2669131
Title
Single-photon emission from highly uniform site-controlled semiconductor quantum dots
Author
Baier, M. ; Watanabe, S. ; Pelucchi, E. ; Kapon, E. ; Varoutsis, S. ; Gallart, M. ; Robert-Philip, I. ; Abram, I.
Author_Institution
Inst. of Quantum Photonics & Electron., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fYear
2003
fDate
6-6 June 2003
Abstract
We observed anti-bunching of photons emitted from (In)GaAs/AlGaAs quantum dots grown on pyramidal recess patterns. The control on dot position, photon energy (1.43-1.65 eV) and small inhomogeneous broadening (10 meV) make them useful in practical single-photon emitters.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor quantum dots; spectral line broadening; 1.43 to 1.65 eV; InGaAs-AlGaAs; inhomogeneous broadening; photon antibunching; semiconductor quantum dots; single-photon emission; single-photon emitters; Autocorrelation; Optical control; Optical filters; Photonics; Quantum computing; Quantum dots; Size control; Stationary state; Stimulated emission; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-749-0
Type
conf
DOI
10.1109/QELS.2003.238261
Filename
1276228
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