Title :
Nanoscale quantum-dot light-emitting diodes
Author :
Fiore, A. ; Paranthoen, C. ; Chen, J.X. ; Ilegens, M. ; Mariucci, L. ; Rossetti, M.
Author_Institution :
Inst. de Photonique et d´Electronique Quantiques, Ecole Polytech. Fed. de Lausanne, Switzerland
Abstract :
We compare several approaches to the fabrication of nanoscale quantum-dot LEDs for single-photon applications, including shadow-mask and oxide-confined structures. Strong carrier localization in the dots allows us to demonstrate efficient submicrometer-sized LEDs.
Keywords :
light emitting diodes; nanotechnology; optical fabrication; quantum optics; semiconductor quantum dots; LED fabrication; carrier localization; light-emitting diodes; nanoscale quantum-dot; oxide-confined structures; shadow-mask; single-photon applications; Apertures; Current density; Gallium arsenide; Light emitting diodes; Optical device fabrication; Optical filters; Oxidation; Quantum dots; Stimulated emission; Temperature;
Conference_Titel :
Quantum Electronics and Laser Science, 2003. QELS. Postconference Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-749-0
DOI :
10.1109/QELS.2003.238262
