• DocumentCode
    2669352
  • Title

    A novel scalable spiking pixel architecture for deep submicron CMOS technologies

  • Author

    Boussaid, Farid ; Shoushun, Chen ; Bermak, Amine

  • Author_Institution
    Western Australia Univ., Perth, WA
  • fYear
    2006
  • fDate
    5-7 Sept. 2006
  • Firstpage
    131
  • Lastpage
    135
  • Abstract
    In this paper, the authors propose a scalable spiking pixel architecture for deep submicron CMOS technologies. The proposed pixel architecture uniquely combines counting and memory functions into a single compact circuit, providing for in-pixel storage capability; in-pixel analog-to-digital conversion and random read-out of digital pixel values. Pixel fill-factor is better than 15% for a 50times50mum pixel fabricated using AMI 0.35mum CMOS technology. Reported experimental results validate the proposed spiking pixel architecture for the next generation of deep submicron silicon processes
  • Keywords
    CMOS image sensors; analogue-digital conversion; 0.35 micron; 50 micron; CMOS technology; analog-to-digital conversion; in-pixel storage; pixel fill-factor; random read-out; spiking pixel architecture; CMOS technology; Counting circuits; Delay; Inverters; Lighting; Photodiodes; Random access memory; Strontium; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
  • Conference_Location
    Tunis
  • Print_ISBN
    0-7803-9726-6
  • Type

    conf

  • DOI
    10.1109/DTIS.2006.1708718
  • Filename
    1708718