Title :
A single-transistor ferroelectric memory cell
Author :
Nakamura, T. ; Nakao, Y. ; Kamisawa, A. ; Takasu, H.
Author_Institution :
Rohm Co. Ltd., Kyoto, Japan
Abstract :
This paper describes a type of ferroelectric non-volatile memory ferroelectric floating gate RAM (FFRAM) as a new type of ferroelectric memory FET that can consist of a single-transistor cell. Such a cell has several advantages, including a non-destructive read out and simple high-level integration.
Keywords :
ferroelectric storage; nondestructive readout; random-access storage; FFRAM; MFMISFET; ferroelectric floating gate RAM; ferroelectric memory FET; high-level integration; nondestructive read out; nonvolatile memory; single-transistor cell; Capacitors; Electrodes; FETs; Ferroelectric materials; Nonvolatile memory; Prototypes; Random access memory; Read-write memory; Transistors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2495-1
DOI :
10.1109/ISSCC.1995.535279
