DocumentCode
2669528
Title
A single-transistor ferroelectric memory cell
Author
Nakamura, T. ; Nakao, Y. ; Kamisawa, A. ; Takasu, H.
Author_Institution
Rohm Co. Ltd., Kyoto, Japan
fYear
1995
fDate
15-17 Feb. 1995
Firstpage
68
Lastpage
69
Abstract
This paper describes a type of ferroelectric non-volatile memory ferroelectric floating gate RAM (FFRAM) as a new type of ferroelectric memory FET that can consist of a single-transistor cell. Such a cell has several advantages, including a non-destructive read out and simple high-level integration.
Keywords
ferroelectric storage; nondestructive readout; random-access storage; FFRAM; MFMISFET; ferroelectric floating gate RAM; ferroelectric memory FET; high-level integration; nondestructive read out; nonvolatile memory; single-transistor cell; Capacitors; Electrodes; FETs; Ferroelectric materials; Nonvolatile memory; Prototypes; Random access memory; Read-write memory; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-2495-1
Type
conf
DOI
10.1109/ISSCC.1995.535279
Filename
535279
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