Title :
Analysis of CNTFET physical compact model
Author :
Maneux, C. ; Goguet, J. ; Frégonèse, S. ; Zimmer, T. ; Honincthun, H. Cazin d ; Galdin-Retailleau, S.
Author_Institution :
ENSEIRB, Bordeaux Univ., Talence
Abstract :
On the basis of acquired knowledge, the paper present a DC compact model designed for the conventional CNTFET (C-CNTFET) featuring a doping profile similar to n-MOSFET. The specific enhancement lies on the implementation of a physical based calculation of the minima of energy conduction subbands. This improvement allows a realistic analysis of the impact of CNT helicity and radius on the DC characteristics. The purpose is to enable the circuit designers to challenge CNTFET potentialities for performing logical or analogical functionalities within complex circuits
Keywords :
carbon nanotubes; equivalent circuits; field effect transistors; nanotube devices; semiconductor device models; CNT helicity; CNT radius; CNTFET; DC characteristics; analogical function; ballistic 1D theory; carbon nanotube field-effect transistor; compact modeling; doping profile; energy conduction subbands minima; logical function; CNTFETs; Carbon nanotubes; Chemical elements; Circuit simulation; Doping profiles; MOSFET circuits; Nanoelectronics; Semiconductivity; Semiconductor process modeling; Carbon nanotubes FET (CNTFET); ballistic 1-D theory; compact modeling;
Conference_Titel :
Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006. International Conference on
Conference_Location :
Tunis
Print_ISBN :
0-7803-9726-6
DOI :
10.1109/DTIS.2006.1708733
