DocumentCode
2669607
Title
Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique
Author
Lehmann, J. ; Leroux, C. ; Reimbold, G. ; Charles, M. ; Torres, A. ; Morvan, E. ; Baines, Y. ; Ghibaudo, G. ; Bano, E.
Author_Institution
Univ. Grenoble Alpes, Grenoble, France
fYear
2015
fDate
23-26 March 2015
Firstpage
163
Lastpage
168
Abstract
In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.
Keywords
III-V semiconductors; aluminium compounds; electric resistance measurement; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; CEA-LETI fabrication line; GaN-Si; HEMT wafer; four-point probe technique; high electron mobility transistor; sheet resistance measurement; Aluminum gallium nitride; Electric breakdown; Extraterrestrial measurements; Gallium nitride; HEMTs; MODFETs; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2015 International Conference on
Conference_Location
Tempe, AZ
ISSN
1071-9032
Print_ISBN
978-1-4799-8302-5
Type
conf
DOI
10.1109/ICMTS.2015.7106134
Filename
7106134
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