• DocumentCode
    2669670
  • Title

    50 nA, 1 V nanowatt resistor-free compact CMOS current references

  • Author

    Kussener, Edith ; Rudolff, F. ; Guigues, F. ; Barthelemy, H. ; Liu, Wei ; Hu, John ; Ismail, Mohammed

  • Author_Institution
    Dept. of Micro & Nanoelectron., Inst. Mater. Microelectron. Nanosci. de, France
  • fYear
    2010
  • fDate
    12-15 Dec. 2010
  • Firstpage
    1212
  • Lastpage
    1215
  • Abstract
    This paper presents a comparison between resistor-free nanowatt CMOS current references based on different topologies. All of these current references are designed to generate 50 nA currents under 1 V power supply. Designed in a standard 0.35 μm CMOS process, these current references showed low sensitivity with respect to the variations from power supply, fabrication process and temperature. EKV 2.0 MOS model which is able to provide continuous equation over different inversion levels (weak, moderate, and strong) is used in the process of analyzing these current references. Simulation results for these current references showed a max temperature coefficient of 0.07 %/°C over a temperature range of -40°C to 125°C and a minimum power supply as low as 0.75 V.
  • Keywords
    CMOS integrated circuits; current 50 nA; fabrication process; nanowatt resistor-free compact CMOS current references; power supply; size 0.35 mum; temperature -40 degC to 125 degC; voltage 1 V; CMOS integrated circuits; Lead; Semiconductor device modeling; Current reference; EKV; MOS Model; Nanowatt;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
  • Conference_Location
    Athens
  • Print_ISBN
    978-1-4244-8155-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2010.5724736
  • Filename
    5724736