DocumentCode :
2669670
Title :
50 nA, 1 V nanowatt resistor-free compact CMOS current references
Author :
Kussener, Edith ; Rudolff, F. ; Guigues, F. ; Barthelemy, H. ; Liu, Wei ; Hu, John ; Ismail, Mohammed
Author_Institution :
Dept. of Micro & Nanoelectron., Inst. Mater. Microelectron. Nanosci. de, France
fYear :
2010
fDate :
12-15 Dec. 2010
Firstpage :
1212
Lastpage :
1215
Abstract :
This paper presents a comparison between resistor-free nanowatt CMOS current references based on different topologies. All of these current references are designed to generate 50 nA currents under 1 V power supply. Designed in a standard 0.35 μm CMOS process, these current references showed low sensitivity with respect to the variations from power supply, fabrication process and temperature. EKV 2.0 MOS model which is able to provide continuous equation over different inversion levels (weak, moderate, and strong) is used in the process of analyzing these current references. Simulation results for these current references showed a max temperature coefficient of 0.07 %/°C over a temperature range of -40°C to 125°C and a minimum power supply as low as 0.75 V.
Keywords :
CMOS integrated circuits; current 50 nA; fabrication process; nanowatt resistor-free compact CMOS current references; power supply; size 0.35 mum; temperature -40 degC to 125 degC; voltage 1 V; CMOS integrated circuits; Lead; Semiconductor device modeling; Current reference; EKV; MOS Model; Nanowatt;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-4244-8155-2
Type :
conf
DOI :
10.1109/ICECS.2010.5724736
Filename :
5724736
Link To Document :
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