DocumentCode
2669670
Title
50 nA, 1 V nanowatt resistor-free compact CMOS current references
Author
Kussener, Edith ; Rudolff, F. ; Guigues, F. ; Barthelemy, H. ; Liu, Wei ; Hu, John ; Ismail, Mohammed
Author_Institution
Dept. of Micro & Nanoelectron., Inst. Mater. Microelectron. Nanosci. de, France
fYear
2010
fDate
12-15 Dec. 2010
Firstpage
1212
Lastpage
1215
Abstract
This paper presents a comparison between resistor-free nanowatt CMOS current references based on different topologies. All of these current references are designed to generate 50 nA currents under 1 V power supply. Designed in a standard 0.35 μm CMOS process, these current references showed low sensitivity with respect to the variations from power supply, fabrication process and temperature. EKV 2.0 MOS model which is able to provide continuous equation over different inversion levels (weak, moderate, and strong) is used in the process of analyzing these current references. Simulation results for these current references showed a max temperature coefficient of 0.07 %/°C over a temperature range of -40°C to 125°C and a minimum power supply as low as 0.75 V.
Keywords
CMOS integrated circuits; current 50 nA; fabrication process; nanowatt resistor-free compact CMOS current references; power supply; size 0.35 mum; temperature -40 degC to 125 degC; voltage 1 V; CMOS integrated circuits; Lead; Semiconductor device modeling; Current reference; EKV; MOS Model; Nanowatt;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems (ICECS), 2010 17th IEEE International Conference on
Conference_Location
Athens
Print_ISBN
978-1-4244-8155-2
Type
conf
DOI
10.1109/ICECS.2010.5724736
Filename
5724736
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