Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

Author

Bakowski, Mietek ; Ranstad, Per ; Jang-Kwon Lim ; Kaplan, Wlodek ; Reshanov, Sergey A. ; Schoner, Adolf ; Giezendanner, Florian ; Ranstad, Anton

Author_Institution

Acreo Swedish ICT AB, Kista, Sweden

Volume

62

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

366

Lastpage

373

Abstract

10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter.

Keywords

DC-DC power convertors; power semiconductor diodes; silicon compounds; switching convertors; zero current switching; zero voltage switching; avalanche capability; bipolar stability; dc/dc soft-switching converter; dynamic on-state voltage; forward characteristics stability; losses reduction; reverse recovery behavior; robust junction termination; silicon carbide p-i-n diode; soft-switching industrial power supply; voltage 10 kV; Anodes; Current measurement; Junctions; P-i-n diodes; Silicon carbide; Voltage measurement; 4H-SiC; Junction Termination Extension (JTE); avalanche energy; bipolar degradation; carrier lifetime; dynamic ON-resistance; dynamic on-resistance; p-i-n diode; soft switching; soft switching.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2361165

Filename

6945866